| 摘要 |
PURPOSE:To obtain a short channel FET by selfalignment, by using a method by which a gate electrode is oxidized and reduced at the same time as the diffusion of a source and a drain, and equalizing the oxidizing speed and the diffusing speed. CONSTITUTION:After an active region in a Pt type Si substrate 11 is separated by SiO212, a doped poly Si electrode 14' is selectively formed. When wet oxidization treatment is performed at a high temperature after the implantation of As ions 15 and 16, the N type sources 17 and 18 are formed by diffusion, the poly Si14' is oxidized, the surface thereof is transformed into an SiO2 film, and the gate electrode 14'' whose gate length is reduced is formed. Then a hole is provided at SiO219, and metal wirings 20 and 21 are formed. In this constitution, if the expansion of the diffusion and the oxidization are performed to the same extent, the overlaps of the gate electrode, the source, and the drain can be reduced, the expansion of the diffusion and the thickness of the oxidization can be precisely controlled. Therefore, the short channel MOSFET having excellent characteristics can be obtained. |
