| 摘要 |
PURPOSE:To absorb most of solar energy and to utilize both electric and thermal energy by providing a semiconductor layer which performs only light to heat conversion and has a narrower inhibition band below a photoelectric conversion layer. CONSTITUTION:An N<+> amorphous Ge layer 2 is formed by a glow discharge of PH3+GeH4 on a stainless steel 1. Then, an N layer 31, an I layer 32, and a P layer 33 are sequentially layered by the glow discharge of SiH4, and a photoelectric conversion active layer 3 is constituted. A transparent conducting film 4 of ITO and a grid shaped current collecting electrode 5 of Al are formed. When solar light is inputted into the film 4, the light whose wavelength is 1.3mum or less is absorbed by the layer 2. This wavelength lies in the region whose wavelength is 0.8mum or more which is not abosrbed by the layer 3 wherein the width of inhibition band is 0.95eV. As a result, about 85% of the solar energy is abosrbed by the layers 2 and 3. The energy absorbed by the Ge layer is transformed into heat. The heat transformed from part of the energy which is abosrbed by the Si layer 3 is also taken out of the substrate 1. The heat is utilized through a heat exchanger. In this constitution, the energy utilizing ratio is enhanced. |
