| 摘要 |
PURPOSE:To have a silicon device and a compound semiconductor device formed in one body by a method wherein a unipolar semiconductor and a compound semiconductor are provided on the same substrate and a part of the crystalline semiconductor film of either of the semiconductor is formed on the cyclic irregular surface, to be used for graph-epitaxial, consisting of an insulating material. CONSTITUTION:The cyclic irregular face 2, to be used for grapho-epitaxial, is formed on the semi-insulating GaAs substrate 1 by performing a selective etching and a part of which is formed into an insulated film 8 by performing an anodic oxidation. Then, on a part of the surface, an undoped GaAl layer 4, a P type GaAlAs layer 5, a P type GaAs layer 6 are grown by laminating, an upper electrode 7 to be used as a laser section is coated on the end section of the above layers and on the other end of the surface which is contacting the electrode 7, an Si layer 9 is grown, covered by a thick SiO2 film 10, its center part is formed with a thin SiO2 film 10', an electrode 11 is covered on the film 10' and this section is used as an FET. Through these procedures, a laser oscillation control is performed by the FET and the device can be formed in one body. |
