| 摘要 |
PURPOSE:To obtain a monolithic composite semiconductor device having excellent characteristics by each forming a light emitting or light receiving element on a low index surface of a single substrate, in which the low index surface and an off-angle surface, the orientation of the face are each specified, are combined, by a liqhid phase growth and a gun oscillating element on the off-angle surface by the vapor growth. CONSTITUTION:The two low index surfaces 2, 4 having orientations of faces of each (100)+ or -0.5 deg. or (111)+ or -0.5 deg., are formed on the surface of a substrate 1 in N type GaAs, etc. in which Si is doped and made the desired carrier concentration. In this case, the off-angle surfaces 3, 5 shifted by 3-7 deg. orientation to the surface 2 and the surface 4 are made up between the surfaces 2 and 4, and only the surface 4 is positioned lower than the surface 2. The substrate 1 is constituted in this manner, the light emitting or light receiving elements in GaAlAs proper to liquid-phase epitaxial growth are formed on the low index surfaces 2, 4, the gun diodes in the same composition proper to vapor-phase epitaxial growth are built up on the off- angle surfaces 3, 5, and a composite element is formed. |
