| 摘要 |
PURPOSE:To reduce capacity of pads and to prevent short-circuit at a semiconductor device providing an epitaxial layer reversely conductive of a substrate to isolate circuit elements by junctions by a method wherein the epitaxial layers at the lower parts of an insulating film to form the respective electrode pads thereon are isolated respectively with junctions. CONSTITUTION:The reversely conductive epitaxial layer 2 is formed on the P type (or N type) substrate 1, the samely conductive diffusion layer with the substrate 1 is formed in the epitaxial layer 2 having depth up to reach the substrate 1 to provide isolation regions between the elements, and the respective elements are formed in the isolated regions to constitute an integrated circuit, for example. At this circuit, the diffusion layers 3-1, 3-2 are provided samely with the element regions in the regions of the epitaxial layer 2 wherein the electrode pads 5-1, 5-2 to be connected to lead wires adhering terminals are to be provided, the every pads are isolated respectively by junctions, and the pads 5-1, 5-2 are formed thereon interposing an insulating film 4 between them. Accordingly capacity of the pads can be reduced, and short-circuit between the pads or between the isolation regions to be caused, for example, by break-down of the isolating film 4 can be prevented. |
