| 摘要 |
PURPOSE:To enable to perform a stabilized formation of a CVD film without inflicting an adverse effect caused by attachments by a method wherein a high frequency coil is provided in the vacuum vessel of the device and a reaction gas plasma is formed by applying a high frequency power on the coil. CONSTITUTION:The high frequency coil 5 consisting of stainless steel, for example, is provided in the vacuum vessel 1 having a vacuum evacuating port 2 and a gas feeding port 14. A substrate 3 is placed in the vessel 1, SiH4 gas, for example, is induced in the vessel 1 from the feeding port 4, plasma is formed by applying a high frequency power on the coil 5 and an Si is deposited on the substrate 3. Through these procedures, plasma can be formed in a stabilized condition even when a conductive reaction product is attached on the inner wall of the vessel 1, thereby enabling to improve the controllability, workability and productivity of the film formation. Also, as the vessel 1 can be made of stainless steel and the like, the film consisting of an evaporating material can be formed by plasma by providing a source of evaporation 6 in the vessel 1. |
