| 摘要 |
PURPOSE:To obtain the photoelectric conversion element which is characterized by small leakage currents and quick light response, by layering a transparent conducting film, a II-VI group compound film, a VI group element, and a pair of electrodes, on a light transmission substrate. CONSTITUTION:On quartz glass 1, are layered In2O3 2 with a thickness of 100Angstrom - 10mum and CdS3 with a thickness of 1-5mum. Before they are layered, heat treatment is performed in S vapor, and the ratio of Cd and S in the layer 3 is kept in stoichiometric quantity. Then Te4 is evaporated to about 2mum on the film 3. Finally an Au electrode 5 is provided on the film 4. In this constitution, the long device with a large area can be readily obtained. Since the photoelectric conversion layer of VI group film and II-VI group film are provided, the leakage currents are small and the light response speed is quick. |
