| 摘要 |
PURPOSE:To prevent wrong operation of an ultra-violet rays eliminating ROM, for example, by a method wherein a polycrystalline Si layer not to be used for wiring is provided in an interlayer insulating film separating between a polycrystalline Si layer for wiring and a metal layer to be made to reflect or to absorb incident rays. CONSTITUTION:The polycrystalline Si layer for wiring 28 is formed on an insulating film 27 on an Si substrate 26, and after an opening is formed in the insulating film 27 to provide the desired diffusion layer 29, the first interlayer insulating film 30 (for example a film of PSG) is formed on the whole surface thereof. After a non- doped polycrystalline Si layer 31 and the second interlayer film 32, for example, are accumulated thereon in order, contact holes 33, 34 are formed. Then Al wirings 35, 36, for example, to be connected to the wiring 28 and the diffusion layer 29 are formed in succession. Accordingly the part other than the contact hole parts of the device is covered with the polycrystalline Si layer 31 transmitting no light, and the contact hole parts are covered with the metal wirings 35, 36. Therefore enlargement of leak current to be caused by incidence of light can be prevented, and wrong operation can be prevented. |
