| 摘要 |
A magnetron sputtering apparatus for producing thin films, which comprises at least two spaced apart opposing electrodes, one of the electrodes having a space therein and being used for mounting a target thereon, from which film-forming atoms are ejected by ion-bombardment, the other electrode being used for mounting a substrate thereon, and a magnet arranged in the space of the target mounting electrode, characterized in that the magnet is mounted on a means for adjusting the distance between the target and the magnet, the means for adjusting said distance being provided in the one electrode on which the target is mounted. The magnetron sputtering apparatus of the present invention enables one to adjust the magnetic flux density at the surface of the target by the adjustment of the distance between the target and the magnet, thus making it possible to produce thin films with uniform characteristics, even if the sputtering is repeated many times without exchange of the target.
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