发明名称 |
SEMICONDUCTOR STRUCTURE WITH IMPROVED PHOSPHOSILICATE GLASS ISOLATION |
摘要 |
<p>In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phosphosilicate glass (PSG) on top surface of a polycrystalline silicon layer which may be doped by phosphorous impurities diffusing from PSG.</p> |
申请公布号 |
CA1115856(A) |
申请公布日期 |
1982.01.05 |
申请号 |
CA19790322415 |
申请日期 |
1979.02.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GARBARINO, PAUL L.;REVITZ, MARTIN;SHEPARD, JOSEPH F. |
分类号 |
H01L29/78;H01L21/3105;H01L21/321;H01L21/339;H01L21/8234;H01L29/762;(IPC1-7):01L21/225 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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