Apparatus for sensing the wavelength and intensity of light

摘要

Disclosed is a solid state wavelength detection system responding to output signals derived from a photoelectric semiconductor device. The photoelectric semiconductor device comprise at least two PN junctions formed at different depth from the surface of the semiconductor substrate. A deeper PN junction develops an output signal related to longer wavelength component of the light impinging thereon. A shallower PN junction develops an output signal related to shorter wavelength component of the impinging light. These two output signals are logarithmically compressed and compared with each other. Difference of the logarithmically compressed output signals represents the wavelength information of the impinging light.