发明名称 Method of preparing di and poly chalcogenides of group VIIb by low temperature precipitation from nonaqueous solution and small crystallite size stoichiometric layered dichalcogenides of rhenium and technetium
摘要 Finely divided, small particle (0.1 micron or less) small crystallite (about 50 Ax100 A or less) chalcogenides of manganese, rhenium and technetium are described. These compositions are prepared by mixing the absence of an aqueous solvent, a manganese, rhenium or technetium salt with a source of chalcogenide yielding a precipitate. The manganese, rhenium or technetium salt and the source of chalcogen can be mixed either neat or in the presence of a nonaqueous aprotic solvent. The precipitate which results before removal of the anion salt is a finely divided product. In the case of rhenium dichalcogenide the product possesses a layered structure. The anion salt may be removed by any technique common to the art, pumping under vacuum being one such technique, washing with a suitable solvent being another. A method is described for the preparation of di- and poly-chalcogenides of the formula MXy wherein M is a metal selected from the group consisting of mangangese, rhenium and technetium, X is a chalcogen selected from the group consisting of sulfur, selenium, tellurium and mixtures thereof, and y is a number ranging from about 1.5 to about 4, preferably about 2, comprising the low temperature, nonaqueous precipitation of said MXy compounds from mixtures of the salts of said manganese, rhenium and technetium. Said precipitation occurs in the absence of aqueous solvents. The process of the instant invention permits the preparation of materials uncontaminated by water, oxygen or hydrolysis products.
申请公布号 US4308171(A) 申请公布日期 1981.12.29
申请号 US19800169425 申请日期 1980.07.16
申请人 EXXON RESEARCH & ENGINEERING CO. 发明人 DINES, MARTIN B.;CHIANELLI, RUSSELL R.;PECORARO, THERESA A.
分类号 B01J27/04;B01J27/057;C01B19/00;C01G45/00;C01G47/00;C01G55/00;C01G99/00;(IPC1-7):B01J31/32;B01J27/02;C01B17/00 主分类号 B01J27/04
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