发明名称 Method of manufacturing a field-emission cathode structure
摘要 A method of manufacturing a field-emitter array cathode structure in which a substrate of single crystal material is selectively masked such that the unmasked areas define islands on the underlying substrate. The single crystal material under the unmasked areas is orientation-dependent etched to form an array of holes whose sides intersect at a crystallographically sharp point. Following removal of the mask, the substrate is covered with a thick layer of material capable of emitting electrons which extends above the substrate surface and fills the holes. Thereafter, the material of the substrate underneath the layer of electron-emitting material is etched to expose a plurality of sharp field-emitter tips.
申请公布号 US4307507(A) 申请公布日期 1981.12.29
申请号 US19800185702 申请日期 1980.09.10
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 GRAY, HENRY F.;GREENE, RICHARD F.
分类号 H01J9/02;(IPC1-7):B01J17/00;H01J1/02 主分类号 H01J9/02
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