发明名称 |
Method of manufacturing a field-emission cathode structure |
摘要 |
A method of manufacturing a field-emitter array cathode structure in which a substrate of single crystal material is selectively masked such that the unmasked areas define islands on the underlying substrate. The single crystal material under the unmasked areas is orientation-dependent etched to form an array of holes whose sides intersect at a crystallographically sharp point. Following removal of the mask, the substrate is covered with a thick layer of material capable of emitting electrons which extends above the substrate surface and fills the holes. Thereafter, the material of the substrate underneath the layer of electron-emitting material is etched to expose a plurality of sharp field-emitter tips.
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申请公布号 |
US4307507(A) |
申请公布日期 |
1981.12.29 |
申请号 |
US19800185702 |
申请日期 |
1980.09.10 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
GRAY, HENRY F.;GREENE, RICHARD F. |
分类号 |
H01J9/02;(IPC1-7):B01J17/00;H01J1/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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