| 摘要 |
<p>Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon-slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally-solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.</p> |
