| 摘要 |
PURPOSE:To improve the performance of a semiconductor light emitting element by epitaxially growing in liquid phase continuously different conductive type two-layer clad layers selectively on the periphery of a mesa stripe and burying the mesa stripe. CONSTITUTION:A clad layer 2 made of N-InP, and active layer 3 made of N- InGaAsP and the second clad layer made of P-InP at part 4a are sequentially continuously epitaxially grown on a substarate 1 made of N-InP the (001) plane as a main surface using a slide type liquid phase growing process. Then, an SiO2 film is covered thereon, and a mask pattern 6 is formed along the direction of the azimuth (110) in the plane on the substrate. Thereafter, a mesa stripe 7' made of the layers 2, 3 and the part 4a of the layer 4 and having a pattern 6 on the upper surface is formed. Further, a clad layer 8 consisting of P-InP reaching the active layer 3 of the stripe 7' and a clad layer 9 reaching the pattern 6 are formed, burying the stripe 7', thereby, improvig the light emitting capacity and operating life period of the light emitting element. |
