发明名称 BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain an excellent bonding wire by limiting the purity of Ag by weight to more than 99.97%. CONSTITUTION:When the purity of Ag is less than 99.97wt%, Bi, Ca, Cd, Cu, Mg, Pb, Si, Sn, Fe and so forth readily oxidizable in the Ag and their oxides obstuct the preferred properties of the Ag is general and hence deteriorate the bonding property of the Ag. When this purity is maintained, its fracture strength can be particularly improved, and the Ag has excellent rate of elongation and excellent bonding property using H2 flame.
申请公布号 JPS56169341(A) 申请公布日期 1981.12.26
申请号 JP19800073621 申请日期 1980.05.31
申请人 发明人
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
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