发明名称 AGING DEVICE FOR SNO2 SERIES SEMICONDUCTOR GAS SENSOR
摘要 PURPOSE:To equalize the characteristics in the case the aging is performed in the gaseous atmosphere whose generating rate is high in the gas generated in the equipment itself in which gas sensors are mounted, by controlling the amount of said atmospheric gas. CONSTITUTION:After the gas sensors GS are set on a top plate 25 of a doping tank 22, aging time is set by a timer. Then, a motor 19 and a heater 17 are started, and dimethyl siloxane gas is generated from a silicon compound 16. The inside of the doping tank is heated to 150-250 deg.C by the heater 17. The generated gas is completely filled in the doping tank 22 by an agitating fan 18. The concentration of said gas is detected by a gas detecting element 24 attached to the doping tank 22, its value is compared with the reference value set in a gas control device, the heater 17 is intermittently driven by said compared signal, and the gas concentration is equalized.
申请公布号 JPS56168539(A) 申请公布日期 1981.12.24
申请号 JP19800073922 申请日期 1980.05.30
申请人 SHARP KK 发明人 TANABE TAKESHI;TAKEMOTO MASAHIRO
分类号 G01N27/12;(IPC1-7):01N27/12 主分类号 G01N27/12
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