| 摘要 |
PURPOSE:To prevent the failure, during use, of the wafer holding pins of the susceptor of the plasma CVD device for subjecting wafers to a batch treatment in the production process for LSIs by forming these holding pins of a carbon fiber reinforced carbon material or ceramic material. CONSTITUTION:The quartz tube 1 of the plasma CVD device which is alternately disposed with flat planar cathodes 4 and anodes 5 within the quartz tube 1 having a gas introducing port 2 and a discharge port 3 and has the susceptor 7 provided with the holding pins 6 holding the wafers 8 is heated to 200 to 400 deg.C. While reactive gases are passed therein, an electric discharge is generated between the cathodes 4 and the anodes 5 to form an insulating film consisting of Si3N4 on the surfaces of the wafers 8. The wafer holding pins 6 are formed of the carbon material using carbon fibers consisting of a high-polymer material as a raw material as a reinforcing material or is formed of the ceramic material, such as SiC or Si3N4, having 2 to 7X10<-6>/ deg.C cofft. of thermal expansion in such a case. The holding pins which are not broken by the impact during transportation are obtd. |
