| 摘要 |
PURPOSE:To prevent deformation of a marker, and therefore, piling of layers can be achieved with a high accuracy, in a circuit pattern forming process by an irradiation with electron rays, by setting amounts of rays for the irradiation to the marker and the surrounding area to a value within an inversion region of resist sensitivity characteristics. CONSTITUTION:In a selective oxidizing process of MOSIC, etc., after forming an oxide film 8 and a nitride film 9 on a substrate 7 having a convex type marker 2, by coating such a material as a positive resist PMMA10, it is exposed to electronic rays 11 and 12. At this time, amounts of exposure to the marker 2 and the surrounding area are so adjusted as to cause a negative inversion of approximately 2X10<-3>Coulomb/cm<2>. It is possible, by doing so, to remove only the resist 10 of a separating region after development, and by enabling to leave the nitride film 9 on the marker 2, it is possible to prevent variation of the marker 2 due to the formation of a selective oxidizing layer 14. Likewise, if this is applied to a process of forming such a material as a gate poly Si pattern by a negative resist, the poly Si layer can be completely removed from the marker 2, and the accuracy of the marker can be maintained. |
