| 摘要 |
PURPOSE:To refine manufacturing of pattern and to improve productivity, by executing selective irradiation of Ga ion onto a resist layer coated on a specimen being processed, and also by removing nonirradiated section of a resist by oxygen ion plasma. CONSTITUTION:In such a container as a vacuum container, Ga2 kept in the container 3 is heated and melted, and tip of a W wire 1 is moistened a little, and by impressing negative high voltage onto a drawer type electrode 5, a Ga ion beam 8 is pulled out. This Ga ion 8 is selectively irradiated onto a specimen 11 prepared by coating a PMMA resist 17 on an Si wafer 15 which is provided with such a coating as an oxide coating 16, so that a Ga irradiated section 18 is formed. And then, by treating this specimen by using such a material as oxygen plasma (development), other resist layers 17 than the irradiated section 18 are removed. As polymerized ion is used in this manner, scattering can be minimized and therefore a fine pattern can be manufactured. Further, it is possible to improve productivity by executing such a processing treatment as etching, etc. of the oxide coating 16 in the same device following the developing process. |
