发明名称 THRESHOLD VOLTAGE REFERENCED CIRCUIT USED IN BULK EFFECT
摘要 Reference voltage circuit using CMOS transistors, supplies the stable reference voltage. Depletion and enhancement transistors utilize bulk voltage and realize the threshhold voltage difference by compensating the variant voltage according to temperature variation. This circuit includes transistors (M1,M2) and (M3,M4). The source of transistor (M1) connects to the anode of diode (D1) and the cathode of diode (D1) connects to the anode of diode (D2) and the source of transistor (M2). The bulk of transistor (M2) connects to the cathode of diode (D2). The gate of transistor (M7) connects to the gate of transistor (M5) and the source of transistor (M6) connects to the resistors (R1,R2).
申请公布号 KR930010878(B1) 申请公布日期 1993.11.15
申请号 KR19900013667 申请日期 1990.08.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BANG, SANG - RYONG;LEE, SONG - HO
分类号 H03K17/00;(IPC1-7):H03K17/00 主分类号 H03K17/00
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