| 摘要 |
PURPOSE:To compensate the expanding effect of a depletion layer as well as to improve the linearity of resistance for the subject resistance element by a method wherein a controlling electrode is provided on the surface of a diffused resistance region through the intermediary of an insulating film to be used for a controlling electrode, and one of the resistance terminal electrodes and the controlling electrode are connected. CONSTITUTION:For example, a p<-> layer 2 is selectively diffused on an n<--> type Si substrate 1 and a p<+> contact diffusion layers 3 and 4 are provided on both ends of the diffusion layer 2. On the surface of the diffusion layer 2 located between the diffusion layers 3 and 4, a controlling electrode 11 consisting of a polycrystalline Si, for example, is formed through the intermediary of an insulating film 10 to be used for the controlling electrode. On the entire surface of the electrode 11, an insulating film 13 is deposited and after apertures 14-16 have been provided, metal electrodes 17 and 18 are formed and used as a resistance element. The resistance element of the above constitution is used under the condition wherein a negative voltage is applied to the electrodes 18 as against the electrode 17. Through these procedures, the expansion of the depletion layer in the vicinity of a junction J due to application of a high tension voltage can be suppressed by the MOS effect of the controlling electrode and the resistance value can be maintained constant. |
