发明名称 Plasma etching apparatus II-conical-shaped projection
摘要 An improved radial flow parallel plate plasma etcher, whose more uniform etching rate of wafers is due to radially decreasing the spacing between the electrodes wherein the gap between the electrodes is greatest at the circumference and smallest at center of the electrodes.
申请公布号 US4307283(A) 申请公布日期 1981.12.22
申请号 US19790079523 申请日期 1979.09.27
申请人 EATON CORPORATION 发明人 ZAJAC, JOHN
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):B23K9/00 主分类号 C23F4/00
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