| 摘要 |
PURPOSE:To reduce the low-grade polymerizing part of photoresist by arranging a substrate, coated wit negative type photoresist, and a photomask without any contact and exposing the remaining part to specific light after exposure to monochromatic light and development. CONSTITUTION:A substrate 4 coated with negative type photoresist 5 and a photomask 3 are arranged at a 10-40mum interval without any contact while their main surfaces faces to each other, and the photoresist 5 is irradiated with monochromatic light beams 1a-1c for exposure and then developed. The photomask 3 is then removed and the remaining part of the photoresist 5 is exposed by being irradiated with light including a beam (g) (436nm wavelength), a beam (h) (405nm wavelength) and a beam (i) (365nm wavelength). Thus, the reduction of the used amount of the photomask and the improvement of the yield of a pattern edge are accomplished at the same time. |
