发明名称 |
Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
摘要 |
Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier. Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.
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申请公布号 |
US4307132(A) |
申请公布日期 |
1981.12.22 |
申请号 |
US19790092114 |
申请日期 |
1979.11.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
CHU, WEI-KAN;HOWARD, JAMES K.;WHITE, JAMES F. |
分类号 |
H01L21/285;H01L21/60;H01L21/768;H01L23/532;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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