| 摘要 |
<p>PURPOSE:To store the information by means of photo signals as direct electric signals, by providing a photoconductive layer and light transmissible gate electrode on the dielectric substance surface layer of an insulation gate type FET having duplicated dielectric substance gate insulation layer. CONSTITUTION:A P type region which functions 2 as the source and the drain is provided on an N type Si substrate 1. A thin SiO2 layer 4 is formed on the surface of a channel region 3 and an Si3N4 layer 5, having 500-700Angstrom thick is coated on it. An Sb2O3 film 9, having 1-2mum thick is formed on it and an ITO film which is transparent and conductive is coated further on it as a gate electrode. Other than a part of the channel layer 3 and the P type region 2, thick SiO2 covers, and a source and drain Al electrode 8 is provided on the P type region 2. A pulse voltage is applied between the substrate 1 and the ITO thin film 10 and an optical signal is projected, then the one-bit optical signal is stored directly in the form of an electric signal.</p> |
