| 摘要 |
PURPOSE:To prevent the functioning of a protective diode as a thyristor by a method wherein an n<+>-n substrate is used as a P channel MOSFET, and a peripheral n<+> region and a source region are not connected. CONSTITUTION:An n type epitaxial layer 11 is grown on an n<+> type Si substrate 10, and a p type diffusion region 15 serving as a protective diode is formed. An n<+> diffusion region 16 functioning as an anode of the diode is made up, and connected to a gate through wiring 18, and an n<+> diffusion layer 17 short-circuiting with the n substrate is formed to a peripheral section of the p type layer. The p<+> type source- drain regions 12, 13 of a p channel MOS transistor are formed, and an insulating gate 14 is formed. The source 12 and the n<+> substrate 10 are connected. When a negative voltage is applied to VGS, the currents of the diode are currents injected from the drain flow to the n<+> substrate side, and a thyristor phenomenon is not generated. |
