| 发明名称 |
A method for selective removal of hard trench masks. |
| 摘要 |
<p>After trench formation on a semiconductor wafer (14) using a hard trench mask containing a phosphosilicate glass top layer and an underlying thermal oxide layer, the phosphosilicate glass layer may be removed without substantially etching the thermal oxide layer. The wafer temperature is increased to at least 40 DEG C (36) prior to etching with an HF/H2O vapor (40-44). <IMAGE></p> |
| 申请公布号 |
EP0628993(A2) |
申请公布日期 |
1994.12.14 |
| 申请号 |
EP19940108869 |
申请日期 |
1994.06.09 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WONG, MAN |
| 分类号 |
H01L21/302;H01L21/311;H01L21/316;(IPC1-7):H01L21/311;H01L21/76 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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