| 摘要 |
PURPOSE:To simply the rapidly detect the remaining resist on a semiconductor wafer on which a predetermined pattern is formed with radiation responsive resist by heating the wafer in a reduced-pressure container when detecting the remaining resist on the wafer and measuring the gas discharge amount from the wafer. CONSTITUTION:An ion gauge 8 is mounted on a sealed container 1 having a wafer conveying inlet, and an oil diffusion pump 2 is connected through a main valve 3 and a conductance valve 4 connected in parallel with the container. An oil rotating pump 6 is connected through an auxiliary valve 5 to the pump 2, a roughly pumping valve 7 is branched from the intermediate between the valve 5 and the pump 6, and is connected to the container 1. The container 1 is thus constructed, a semiconductor wafer 10 on which many resist patterns are already formed and stood on the wafer carrier 11 is contained in the container 1, the container is evacuated in high vacuum, and the interior is heated at approx. 150 deg.C by the heater 9 on the outer periphery of the container 1. When the remaining resist exists on the wafer 1, the internal pressure in the container 1 is raised upon heating, and accordingly the adherence of the remaining resist can be identified. |
