| 摘要 |
PURPOSE:To simplify manufacturing process and improve characteristics controllability and reporducibility, in an E/D type gate circuit to be provided on a semi-insulated GaAs substrate, by making impurity concentration of a D-type channel higher than concentration of an E-type channel. CONSTITUTION:Surface of a semi-insulated GaAs substrate 1 is covered with an insulation film 12, a resist mask 13 on which an E-type channel region is bored is provided, and ion is injected into an N<-> layer 14. And then, another resist mask 15 is provided, and an N<+> layer is injected to E-type FET source drain regions 161 and 162 and D-type FET forming region 163. After removing a resist 15, providing hole on the source drain region of the insulation film 12 and forming wiring layers 171-173 of such a metal as an Au-Ge alloy, a hole is provided on the gate region and aluminum schottky gates 181 and 182 are provided. As a circuit consisting of thus manufactured E-type FET Q11 and Dk-type FET Q12 does not require etching process, etc., manufacturing process can be simplified and fluctuation of characteristics can be minimized. |
