发明名称 EXPOSING METHOD FOR ELECTRON BEAM
摘要 PURPOSE:To enable the drawing of a predetermined pattern only by virtually dividing the exposure region on a specimen into a plurality of element regions, providing memory cells in a memory corresponding to the regions, unloading the information in the element regions of the memory, and exposing with an electron beam of small diameter. CONSTITUTION:The region F to be exposed on the specimen is divided into m pieces of segments in an X-axis direction, and is divided into n pieces of segments in a Y-axis direction, is thus divided virtually into mXn pieces. Then, the coordinates of these element regions are stored in a memory having bit capacity corresponding to this number of pieces, and the diameter of the spot of the electron beam used for the exposure is contracted to 1/N of the size in perpendicular direction to the scanning of the beam. When it is thus formed and is exposed in the element regions P, Q1, Q2 in the region F, the electron beam from an electron gun is condensed through a lens into an infinitesimal diameter in accordance with the coordinates stored in the memory, is sequentially scanned while being deflected by an electromagnetic deflection system, thereby forming the pattern of prescribed interval.
申请公布号 JPS56164534(A) 申请公布日期 1981.12.17
申请号 JP19800068171 申请日期 1980.05.22
申请人 NIPPON ELECTRON OPTICS LAB 发明人 FUJISAWA MINORU;SAKAKIBARA ICHIROU
分类号 H01L21/027;H01J37/302;(IPC1-7):01L21/30 主分类号 H01L21/027
代理机构 代理人
主权项
地址