| 摘要 |
PURPOSE:To make it possible to execute bonding at a low temperature and at a lower cost, by forming a bump electrode, which is provided through a barrier layer and an adhesiveness-strengthening layer on a pad, by plating tin and gold in turn. CONSTITUTION:An aluminum pad 8 is formed on an Si chip 6 through an SiO2 film 7, and a bump electrode 4 is formed on this pad 8. At first, a PSG film 13 piled on the pad 8 is provided with an opening, and an aluminum barrier layer 9 which is made of such a substance as Cr and an adhesiveness-strengthening layer 10 which is made of such a substance as Cu are formed. And then, after a bump 11 was formed by plating a tin layer (as thick as approximately 15mum) using a resist mask, an Au layer 12 is plated thin (approximately 1mum) on surface of the bump 11. It is possible, by doing so, to achieve bonding with an inner lead of a tape at a low temperture and a low load and also to lower the manufacturing cost. |
