发明名称 Semiconductor IC device having a RAM interposed between different logic sections and by-pass signal lines extending over the RAM for mutually connecting the logic sections
摘要 In a gate array with a RAM which is disposed between first and second logic circuit blocks each of which having plural logic gates, by-pass signal lines which interconnect the logic circuit blocks are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines, such as word lines of the RAM, formed from a layer which is adjacent to the by-pass signal lines are disposed, with respect to a plan view layout arrangement of the main surface of a chip, so as to intersect the latter at right angles. In addition, interconnection pitches of signal lines in different wiring layers which extend parallel with each other are set so that noises are cancelled in differential sense circuits.
申请公布号 US5477067(A) 申请公布日期 1995.12.19
申请号 US19930114091 申请日期 1993.08.31
申请人 HITACHI, LTD. 发明人 ISOMURA, SATORU;IWABUCHI, MASATO;OGIUE, KATSUMI
分类号 H01L21/60;H01L23/057;H01L25/065;H01L25/18;H01L27/118;(IPC1-7):H01L27/10;H01L27/11 主分类号 H01L21/60
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