发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To improve recovery rate of element, by setting the minimum required width for a dicing line which scribes on a condition that edge line of a diamond cutter to be determined by its shape and inclination angle would not contact oxide film on a wafer. CONSTITUTION:When a wafer 1 is scribed by an 8-point diamond cutter 2, either one of heel points 91-94 or toe points 101-104 of the cutter 2 is pressed to contact a dicing line 3. When a heel point 92 is used, for example, the minimum line widths L1-L4 which do not allow four edge lines 7 such I, I' to contact an oxide film 5 of a film thickness H are calculated actual shape and inclination angle lambda of the cutter 2. By using the maximum value of L1-L4 as a width of the dicing line 3, the minimum required dimensions are determined. By doing so, the dicing line width is prevented from becoming excessive, and therefore, recovery rate of element to be formed can be improved.</p>
申请公布号 JPS56164552(A) 申请公布日期 1981.12.17
申请号 JP19800067126 申请日期 1980.05.22
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SHIYOUROKU TAKESHI
分类号 H01L21/301;H01L21/78;(IPC1-7):01L21/78 主分类号 H01L21/301
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