| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A bipolar transistor NPN structure (20) is constructed at a major surface of a silicon body with a P-type polycrystalline silicon electrode (13) contacting a P-type base zone (13.6). Excess acceptor impurities from the polycrystalline silicon electrode (13) are diffused into the base zone (13.6) in order to tailor its conductivity profile. |
| 申请公布号 |
JPS56164577(A) |
申请公布日期 |
1981.12.17 |
| 申请号 |
JP19810058353 |
申请日期 |
1981.04.17 |
| 申请人 |
WESTERN ELECTRIC CO |
发明人 |
MAACHIN POORU REPUSERUTAA;SHIMON MIN SE |
| 分类号 |
H01L29/73;H01L21/225;H01L21/331;H01L23/532;H01L29/08;H01L29/10;H01L29/423;H01L29/735 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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