发明名称 Low voltage SOI (silicon on insulator) logic circuit
摘要 A SOI (Silicon On Insulator) logic circuit including serially connected power switching SOI MOSFETs (44, 45) and a logic circuit (43) constituted by SOI MOSFETs. The bodies of the MOSFETs of the logic circuit are made floating state, thereby implementing low threshold voltage MOSFETs. The bodies of the power switching MOSFETs are biased to power supply potentials, thereby implementing high threshold MOSFETs. The low threshold voltage MOSFETs enable the logic circuit to operate at a high speed in an active mode, and the high threshold voltage power switching MOSFETs can reduce the power dissipation in a sleep mode. <MATH>
申请公布号 EP0690510(A1) 申请公布日期 1996.01.03
申请号 EP19950110014 申请日期 1995.06.27
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 DOUSEKI, TAKAKUNI
分类号 H01L27/02;H01L27/12 主分类号 H01L27/02
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