| 摘要 |
PURPOSE:To obtain a dynamic memory that has a degree of integration just equivalent to a memory of 1-transistor/cell type in spite of the characteristics of nondestructive action. CONSTITUTION:The figure shows the sectional structure of a cell. The figures 21, 22, 23, 24, 25, 26 and 27 indicate a substrate electrode, a (p) substate, an n<+> floating region, a p<+> floating region, an (n) type base region, a p<+> emitter region and an (n) region respectively. Thus a hook structure is obtained with the n<+>(23) p<+>(24)n(25)n<+>(27) structure. Figures 28 and 29 are connected to the bit line through the P region and n<+> region respectively, and figure 30 is connected to a word line 30'. In the n<+>p<+>in<+> hook structure, the positive pores are accumulated in the p<+> region by making use the fact that both n<+> and p<+> regions are floating. Thus the electron is injected into the high resistance (i) layer from the n<+> region to turn the floating n<+> region into depleted region to secure an accumulation of the voltage information. The voltage information of the depleted n<+> region is not erased by a reading. |
