发明名称 Nand-type flash memory integrated-circuit card
摘要 A NAND-type flash memory integrated circuit card is composed of an input and output bus having first lines for a plurality of NAND-type flash memory components having first and second groups, first lines for zone address data, instruction data, address data and information data, and second lines for the information data only, a first buffer for transmitting the data between the first lines and the NAND-type flash memory components of the first group, a second buffer for transmitting the data between the first lines and the NAND-type flash memory components of the second group, a third buffer for transmitting the data between the second lines and the NAND-type flash memory components of the second group, and a controller for enabling one of the plurality of the NAND-type flash memory components according to the mode control signal, the zone address data and the address data, and one of the first through third latches, in order to instruct one mode among a word mode, a half-word mode for upper eight bits, a byte mode, and a standby mode for awaiting a data input and output with respect to all the NAND-type flash memory components, and for storing and outputting the information data according to the instruction data and the address data applied via the input and output bus. The NAND-type flash memory IC card can be made into a large capacity, and provides an effect of storing and outputting data which is transmitted in parallel in units of a word or a byte.
申请公布号 US5608673(A) 申请公布日期 1997.03.04
申请号 US19950507689 申请日期 1995.07.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 RHEE, WON-WOO
分类号 G11C17/00;G06K19/07;G11C5/00;G11C16/02;G11C16/08;(IPC1-7):G11C11/34 主分类号 G11C17/00
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