| 摘要 |
PURPOSE:To reduce the density of the unbalanced coupler of amorphous semiconductor by forming two semiconductors having different energy band of the same main ingredient material. CONSTITUTION:The first semiconductor of the intermediate structure of an amorphous structure having the first energy band width Eg1 and a crystalline structure and a semiconductor of the same ingredients having the second energy band Eg2 different from the first energy band stable in free energy manner are provided in a semiconductor 1, e.g., silicide such as, for example, silane (SiH4), SiF4, SiH2Cl2 or the like. A pulse current is flowed together with local light emitting in the amorphous semiconductor, unbalanced coupler is activated by heating of the recombination with the unbalanced coupler of the current due to the carrier excited by the light and is slightly rearrayed. Thus, the density of the unbalanced coupler of the amorphous semiconductor can be reduced. |
