| 摘要 |
PURPOSE:To prevent the disconnection of an aluminum wire in a semiconductor device by thermally oxidizing polycrystalline silicon with nitrided silicon film as an antioxidation mask to form an interlayer insulating film, thereby smoothening the stepwise difference in a contact. CONSTITUTION:A gate oxidized film 38 and a gate electrode 39' are formed on a semiconductor crystalline substrate 31. The electrode 39' is covered by thermal oxidation with dioxidized silicon film 40, with the electrode 39' as anti-ion injection mask conductive impurity ions different from the substrate are injected to form a source 43 and a drain 43'. A nitrided silicon film 33 is grown on the surface, with the film 33 as a mask a dioxidized silicon film 40 is formed on the surface 39 of the polycrystalline silicon. Thereafter, a nitrided silicon film 44 is then grown thereon, a dioxidized silicon film is grown except the contacting part, and an interlayer insulating film 47'' is formed. Subsequently, the surface of the polycrystalline silicon of the contacting part is exposed, and then impurity is diffused to form low resistance therein. Thus, it can smoothen the stepwise difference at the contacting part, thereby preventing the disconnection of the aluminum wire 51. |
