| 摘要 |
PURPOSE:To make the etching process speeded up and it uniform by a method wherein a magnet is fitted on the reverse side of an electrode on which a worked material is mounted, and the magnet is moved at the etching, in a dry etching device of a plate electrode type. CONSTITUTION:The electrodes 12, 13 facing parallel to each other are installed in a vacuum container 10 in which a mixed gas of CCl4 and Ar is flowed, and a high frequency electric power is applied between the electrodes to apply a reactive ion- etching to, for example, a Cr film. The magnetic 11 is attached under the electrode 12 on which the to-be-worked piece 14 is placed in the device to apply a magnetic field, and the magnet 11 is reciprocated or otherwise by, for example, a motor to uniformalize the magnetic field for the etching processing. Thereby, the etching speed can be raised and made uniform, and the processing accuracy can be improved by making a reaction plasmatic in a good efficiency. |
