| 摘要 |
PURPOSE:To increase the density of a semiconductor device by bonding a low density thin film made of insoluble metal such as Ta, Ti, or the like or of the nitride of the insoluble metal onto a semiconductor substrate, oxidizing it and thereby forming a high dielectric film and reducing the capacity of one-transistor type memory cell or the like. CONSTITUTION:A low density porous film (approx. 200Angstrom ) of Ta is adhered, for example, by a low voltage spattering onto the overall surface of an Si substrate 31 isolated with an oxidized layer 32, is heat treated (at approx. 1,000 deg.C) and is converted into a TaO5 film 33 (approx. 500Angstrom ). Then, a polysilicon capacity electrode pattern 34 is formed, and with the pattern 34 as a mask the unnecessary part of the film 33 is removed. Subsequently, the steps of forming oxidized films 35, 35', Si gate 36, and a diffused layer 37 are performed, an aluminum electrode wire 39 is formed, and a cell circuit is formed. An SiO2 is also contained in the film 33, but its specific dielectric constant can be set at twice that or higher of the SiO2. Thus, the capacity can be reduced, and the MOS memory circuit can be integrated in high density. |
