发明名称 |
VERFAHREN ZUM PASSIVIEREN VON SILICIUMBAUELEMENTEN |
摘要 |
<p>Passivation of aluminum-metallized silicon components by applying at least one silicon layer. For the purpose of the subsequent contacting, the components are annealed after the application of the silicon layer at a temperature from 480 DEG to 570 DEG C. if the silicon layer thickness exceeds 0.1 mu m and a temperature from 400 DEG to 500 DEG C. if the silicon layer is up to about 0.1 mu m thick, it being possible to omit the annealing operation if the silicon layer thickness is less than about 0.05 mu m.</p> |
申请公布号 |
DE3021175(A1) |
申请公布日期 |
1981.12.10 |
申请号 |
DE19803021175 |
申请日期 |
1980.06.04 |
申请人 |
SIEMENS AG |
发明人 |
DATHE,JOACHIM,DIPL.-PHYS. |
分类号 |
H01L23/52;H01L21/314;H01L21/3205;H01L21/321;H01L21/56;H01L21/60;(IPC1-7):01L21/324;01L21/56 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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