PROCESS FOR PRODUCING EPITAXIAL LAYERS ON SELECTIVELY DOPED SILICON SUBSTRATES WITH HIGH IMPURITY CONCENTRATION

摘要

A method is described for depositing silicon epitaxy with very low defect levels and sharp dopant profiles which are suitable for fabricating high performance, shallow device structures. The epitaxial layer envisioned is less than about 2 microns in thickness. The layer is deposited upon a silicon substrate that has subcollector buried layers therein of above about 1x1020 N type impurity. The substrate is baked at between about 1120 DEG to 1180 DEG C. in hydrogen and then the epitaxial layer is formed using silicon tetrachloride and a temperature of between about 1000 DEG to 1100 DEG C. thereon.