摘要 |
<p>PROBLEM TO BE SOLVED: To enable the node potential at the time of a precharge operation to be held at a potential higher than the threshold value of a capacitor by providing a function precharging the capacitor in a non-boosting period. SOLUTION: A boosting circuit 10 has a charge clamping means 20, a driving means 30 and a MOS capacitor Q3. The MOS capacitor Q3 is connected in between a gate being the input end of the transistor for precharge Tr1 of a first stage and the drain being the output end of the transistor for precharge Trn of the final stage. The charge clamping means 20 has the transistors for precharge Tr1-Trn of plural stages connected in between a power source and a boosting node P and has a function precharging the potential of the MOS capacitor Q3 to a power source potential Vcc by activating all transistors for precharge Tr1, Tr2 in the non-boosting period.</p> |