发明名称 BOOSTING CIRCUIT AND BOOSTING CONTROL METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To enable the node potential at the time of a precharge operation to be held at a potential higher than the threshold value of a capacitor by providing a function precharging the capacitor in a non-boosting period. SOLUTION: A boosting circuit 10 has a charge clamping means 20, a driving means 30 and a MOS capacitor Q3. The MOS capacitor Q3 is connected in between a gate being the input end of the transistor for precharge Tr1 of a first stage and the drain being the output end of the transistor for precharge Trn of the final stage. The charge clamping means 20 has the transistors for precharge Tr1-Trn of plural stages connected in between a power source and a boosting node P and has a function precharging the potential of the MOS capacitor Q3 to a power source potential Vcc by activating all transistors for precharge Tr1, Tr2 in the non-boosting period.</p>
申请公布号 JPH10144080(A) 申请公布日期 1998.05.29
申请号 JP19960298938 申请日期 1996.11.11
申请人 RICOH CO LTD 发明人 FUJIWARA HIDEO
分类号 G11C11/413;G11C11/407;G11C16/06;H01L21/822;H01L27/04;H02M3/07;(IPC1-7):G11C11/413 主分类号 G11C11/413
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