SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor having SOT(semiconductor on insulator) structure in which the wafer can be prevented from warping while sustaining a high breakdown strength and a fabrication method thereof. SOLUTION: An SOI layer 9 is formed on the surface of a silicon substrate 1 through buried oxide 7 and n-ch IGBTs (insulated gate bipolar transistor) and CMOS transistors are fabricated thereon. The silicon substrate 1 is deposited with rear oxide 3 and holes 3a for exposing a part of the rear surface of the silicon substrate 1 are made therein. Finally, rear surface electrodes 5 are formed to touch the exposed rear surface of the silicon substrate 1 while covering the oxide 3.