| 摘要 |
PURPOSE:To obtain the titled resist having the excellent dry etching resistance and available for a large scale integrated circuit by comprising a monodispersive copolymer obtd. by allowing one or more kinds of specified monomer groups to react with a crosslinkable alpha-cyanoacrylate, as a main component. CONSTITUTION:The composition contains the monodispersive copolymer of the alpha-cyanoacrylate having a crosslinking group in a molecule and the monomer shown by the formula as the main component, and said composition is crosslinked before or after irradiating a radiation to improve a dry etching resistance. In the formula, X is CN, NO2 or COOR, Y is CN, H or COOR, R is alkyl group or a halogenated alkyl group. Thus, the resolution or the dry etching resistance are improved, and the titled resist is suitable for super high density engraving in an electron beam or a X ray lithography step at the time of forming the large scale integrated circuit of a D-RAM semiconductor of larger than 64 megabit. |
