| 摘要 |
PURPOSE:To improve the withstand voltage between electrodes by a method wherein after a lower layer electrode made of a polycrystal is oxidized on the surface to form an insulating film and subsequently, the insulating film is irradiated with laser beams for annealing, and an upper layer electrode is arranged on the annealed insulating film. CONSTITUTION:After a gate oxide film 6 and a field oxide film 5 are formed on a silicon semiconductor substrate 1, a polycrystalline silicon film to be made the lower layer electrode is applied a patterning to form an electrode 7 by using the technics of chemical gaseous phase growth and photolithography. Thereafter, the polycrystalline silicon electrode 7 on the surface is oxidized by a thermal oxidizing method to make the inter-electrode insulating film 8 be grown to about 2,500Angstrom thick. Then, the insulating film 8 is irradiated with the laser beams and annealed to effect elimination of faults such as the void in the insulating film 8. Finally, the upper layer electrode 9 is formed by the polycrystalline silicon film to complete a multilayer wiring. The withstand voltage between the electrodes is improved due to the less fault in the insulating film 8. |
