发明名称 SEMICONDUCTOR DEVICE AND LEAD FRAME USED THEREON
摘要 PURPOSE:To reduce the quantity of metal to be covered on the unnecessary sections on the lead frame by a method wherein all the metal film, excluding a tab, is formed thinner than the film of the tab section when the metal film is formed on the lead frame having the tab by means of a plating method. CONSTITUTION:The lead frame 1, haing three lead wires 3, tab 2 located at the point of the lead wire 3 and wire bonding section 11, is provided. This frame is soaked in the first deep plating tank 15 in such manner that the outer frame 4 is facing upward and the first thin film is formed. Then, the lead frame 1 is soaked in the second shallow plating tank in such manner that the tab 2 and a wire bonding section 11 alone will be immersed in the solution and the second silver-plated film 15 is partially formed. The desirable thickness of the silver-plated film is 2mum or more. Through these procedures, a thick metal layer is formed on the necessary section only and the quantity of the metal used can be reduced.
申请公布号 JPS56160059(A) 申请公布日期 1981.12.09
申请号 JP19800062802 申请日期 1980.05.14
申请人 发明人
分类号 H01L23/48;H01L21/48;H01L23/495 主分类号 H01L23/48
代理机构 代理人
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