LIGHT EMISSION ELEMENT OF GALLIUM NITRIDE

摘要

PURPOSE:To reduce a leakage current by a method wherein a specified surface as a substrate is employed. CONSTITUTION:A gallium nitride epitaxial crystal having the substrate surface inclined by 0.5-4 deg. with respect to a sapphire (0001) face or a spinel (111) face is used as the substrate 11. An N type gallium nitride layer 21 and a high resistance gallium nitride layer 31 are formed on the substrate 11. An N type region is exposed in part below an N side electrode 51. The shape of a chip is made rectangular in order to form both of an I side electrode 41 and the N side electrode 51 on the surface of the chip. The substrate 11 is processed is such a manner that the light emission element chip is made parallel to the substrate surface and makes the angle by 40-90 deg. along the longer side with respect to the direction in which a perpendicular line on a crystal face of the substrate 11 is seen from a perpendicular line on the substrate surface.